IXFH10N90
MOSFET N-CH 900V 10A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH10N90 is a HiPerFET™ N-Channel Power MOSFET designed for high voltage applications. This component features a drain-source voltage (Vdss) of 900V and a continuous drain current (Id) of 10A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). It offers a low on-resistance (Rds On) of 1.1 Ohm at 5A and 10V gate drive. Key parameters include a gate charge (Qg) of 155 nC at 10V and input capacitance (Ciss) of 4200 pF at 25V. The device is housed in a TO-247AD (IXFH) package with through-hole mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supplies, industrial motor control, and high-voltage switching applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |