IXFH10N100
MOSFET N-CH 1KV 10A TO-247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH10N100 is an N-Channel HiPerFET™ Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1000 V and a continuous drain current (Id) of 10 A at 25°C. With a maximum power dissipation of 300 W (Tc), it offers robust performance for demanding power conversion tasks. The Rds On is specified at a maximum of 1.2 Ohm at 5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 155 nC at 10 V and input capacitance (Ciss) of 4000 pF at 25 V. This device is housed in a TO-247AD package, suitable for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). The IXFH10N100 is commonly utilized in power supply units, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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