IXFE80N50
MOSFET N-CH 500V 72A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFE80N50, a HiPerFET™ N-Channel Power MOSFET, offers a 500V drain-source voltage rating and 72A continuous drain current at 25°C. This device features a low on-resistance of 55mOhm maximum at 40A and 10V gate drive voltage, with a maximum power dissipation of 580W. The IXFE80N50 is housed in a SOT-227B (miniBLOC) package, designed for chassis mounting. Key parameters include a gate charge of 380nC at 10V and input capacitance of 9890pF at 25V. The operating temperature range is -40°C to 150°C. This component is suitable for applications in power supply, motor control, and industrial power conversion.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 580W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9890 pF @ 25 V |
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