IXFE73N30Q
MOSFET N-CH 300V 66A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Q Class IXFE73N30Q is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 300V and a continuous drain current (Id) of 66A at 25°C (Tc), with a maximum power dissipation of 400W (Tc). The IXFE73N30Q utilizes advanced MOSFET technology to achieve a low on-resistance (Rds On) of 46mOhm at 36.5A and 10V gate drive. Notable parameters include a gate charge (Qg) of 190 nC at 10V and input capacitance (Ciss) of 6400 pF at 25V. The device is housed in a SOT-227B (miniBLOC) package, facilitating chassis mounting for effective thermal management. This MOSFET is suitable for industrial applications requiring robust power switching capabilities.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 36.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400 pF @ 25 V |
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