IXFE55N50
MOSFET N-CH 500V 47A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ N-Channel Power MOSFET, part number IXFE55N50, is designed for high-efficiency power switching applications. This device features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 47A at 25°C (Tc), with a maximum power dissipation of 500W (Tc). The low on-resistance (Rds On) of 90mOhm is achieved at 27.5A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 330 nC at 10V and input capacitance (Ciss) of 9400 pF at 25V. The IXFE55N50 is housed in a SOT-227B (miniBLOC) package for chassis mounting, offering robust thermal performance. This component is suitable for applications in power supplies, motor control, and high-voltage power conversion. It operates within a temperature range of -40°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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