IXFE50N50
MOSFET N-CH 500V 47A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ N-Channel Power MOSFET, part number IXFE50N50, offers a 500V drain-source breakdown voltage and continuous drain current capability of 47A at 25°C (Tc). This device features a low on-resistance of 100mOhm maximum at 25A and 10V Vgs. With a gate charge of 330nC maximum at 10V and input capacitance of 9400pF maximum at 25V, it is designed for efficient switching. The IXFE50N50 is packaged in a SOT-227B (miniBLOC) chassis mount configuration, enabling high power dissipation of 500W (Tc). This MOSFET is suitable for applications in power supply, motor control, and industrial automation sectors requiring robust high-voltage switching performance. Maximum gate-source voltage is ±20V.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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