IXFE48N50QD2
MOSFET N-CH 500V 41A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFE48N50QD2 is a 500V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current (Id) of 41A at 25°C (Tc) and a maximum power dissipation of 400W (Tc). The Rds On maximum is 110mOhm at 24A and 10V gate drive. Key parameters include a gate charge (Qg) of 190 nC at 10V and input capacitance (Ciss) of 8000 pF at 25V. The IXFE48N50QD2 utilizes a chassis mountable SOT-227B package, also known as miniBLOC, facilitating thermal management. It is suitable for use in industrial power supplies, motor control, and renewable energy systems. The device operates within a temperature range of -40°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8000 pF @ 25 V |
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