IXFE48N50Q
MOSFET N-CH 500V 41A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™, Q Class IXFE48N50Q is a robust N-Channel power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 41A at 25°C, with a maximum power dissipation of 400W. The low on-state resistance (Rds On) of 110mOhm at 24A and 10V gate drive ensures efficient power transfer. Key parameters include a gate charge (Qg) of 190 nC and input capacitance (Ciss) of 7000 pF, facilitating fast switching. The IXFE48N50Q utilizes MOSFET technology and is housed in a SOT-227B package, a miniBLOC chassis mount configuration, for effective thermal management. Its operating temperature range is -40°C to 150°C. This device is suitable for industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 25 V |
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