Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

IXFE44N60

Banner
productimage

IXFE44N60

MOSFET N-CH 600V 41A SOT-227B

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS HiPerFET™ IXFE44N60 is a 600V N-Channel Power MOSFET housed in a SOT-227B (miniBLOC) package. This device features a continuous drain current (Id) of 41A at 25°C (Tc) and a maximum power dissipation of 500W (Tc). Key electrical specifications include a Drain-to-Source Voltage (Vdss) of 600V, a maximum Rds(on) of 130mOhm at 22A and 10V gate-source voltage, and a gate charge (Qg) of 330 nC at 10V. The input capacitance (Ciss) is rated at 8900 pF at 25V. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for high-efficiency switching power supplies, industrial motor control, and electric vehicle applications.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C41A (Tc)
Rds On (Max) @ Id, Vgs130mOhm @ 22A, 10V
FET Feature-
Power Dissipation (Max)500W (Tc)
Vgs(th) (Max) @ Id4.5V @ 8mA
Supplier Device PackageSOT-227B
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8900 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FMM75-01F

MOSFET 2N-CH 100V 75A I4-PAC

product image
IXFX64N60Q3

MOSFET N-CH 600V 64A PLUS247-3

product image
VMO650-01F

MOSFET N-CH 100V 690A Y3-DCB