IXFE44N50QD3
MOSFET N-CH 500V 39A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFE44N50QD3 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 39A at 25°C (Tc), with a maximum power dissipation of 400W (Tc). The low on-resistance (Rds On) of 120mOhm at 22A and 10V gate drive minimizes conduction losses. It offers robust performance with a gate charge (Qg) of 190 nC at 10V and input capacitance (Ciss) of 8000 pF at 25V. The SOT-227B (miniBLOC) package with chassis mount capability facilitates efficient thermal management. Operating from -40°C to 150°C, this MOSFET is suitable for demanding applications in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8000 pF @ 25 V |
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