IXFE44N50Q
MOSFET N-CH 500V 39A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFE44N50Q is a HiPerFET™, Q Class N-Channel Power MOSFET designed for high-performance applications. This device features a maximum drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 39 A at 25°C (Tc). With a low on-resistance (Rds On) of 120 mOhm at 22 A and 10 V, it ensures efficient power handling, supporting up to 400 W (Tc) of power dissipation. The IXFE44N50Q utilizes a SOT-227B (miniBLOC) package, facilitating robust chassis mounting for thermal management. Key electrical characteristics include a gate charge (Qg) of 190 nC at 10 V and input capacitance (Ciss) of 7000 pF at 25 V. This MOSFET is suitable for demanding industries such as industrial power supplies, motor control, and renewable energy systems. It operates across a temperature range of -40°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 25 V |
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