IXFE39N90
MOSFET N-CH 900V 34A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFE39N90 is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 900V and a continuous drain current (Id) of 34A at 25°C (Tc). With a maximum power dissipation of 580W (Tc), it is suitable for demanding power conversion tasks. The device offers a low on-resistance (Rds On) of 220mOhm at 19.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 375 nC at 10V and input capacitance (Ciss) of 13400 pF at 25V. The IXFE39N90 utilizes a SOT-227B package, also known as miniBLOC, facilitating chassis mounting. This MOSFET is commonly employed in power supplies, industrial motor control, and renewable energy systems. It operates within a temperature range of -40°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 19.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 580W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 375 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13400 pF @ 25 V |
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