IXFE36N100
MOSFET N-CH 1000V 33A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFE36N100 is an N-Channel HiPerFET™ MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1000V and a continuous Drain current (Id) of 33A at 25°C (Tc), with a maximum continuous power dissipation of 580W (Tc). The Rds On is specified at a maximum of 240mOhm at 18A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 455 nC maximum at 10V and an input capacitance (Ciss) of 15000 pF maximum at 25V. It is housed in a SOT-227B package for chassis mounting. The operating temperature range is -55°C to 150°C (TJ) with a maximum Vgs of ±20V. This device is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 580W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 455 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 25 V |
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