IXFE23N100
MOSFET N-CH 1000V 21A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFE23N100 is an N-Channel HiPerFET™ MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 21 A at 25°C (Tc). With a maximum power dissipation of 500 W (Tc) and a low on-resistance (Rds On) of 430 mOhm at 11.5 A and 10 V Vgs, it offers efficient switching performance. The device boasts a low gate charge (Qg) of 250 nC at 10 V and an input capacitance (Ciss) of 7000 pF at 25 V. Engineered for robust operation, it has a maximum gate-source voltage (Vgs) of ±20V and operates across a wide temperature range of -55°C to 150°C (TJ). The IXFE23N100 is housed in a SOT-227B package, facilitating chassis mounting for effective thermal management. This power MOSFET is utilized in demanding sectors such as industrial power supplies, renewable energy systems, and high-voltage converters.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 25 V |
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