IXFE180N20
MOSFET N-CH 200V 158A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFE180N20 is an N-channel power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 158A at 25°C (Tc). With a maximum on-resistance (Rds On) of 12mOhm at 500mA and 10V gate-source voltage, it offers efficient power handling. The device is rated for 500W power dissipation at 25°C (Tc) and operates across a temperature range of -55°C to 150°C (TJ). Key electrical parameters include a gate charge (Qg) of 380 nC (max) at 10V and input capacitance (Ciss) of 14400 pF (max) at 25V. Designed for chassis mounting, it utilizes the SOT-227B package. This MOSFET is suitable for high-power switching applications in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 158A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 25 V |
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