IXFE180N10
MOSFET N-CH 100V 176A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFE180N10 is a high-performance N-Channel power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 100V, this device offers a continuous drain current of 176A (Tc) and a maximum power dissipation of 500W (Tc). The low on-resistance is specified at 8mOhm at 90A and 10V gate drive. Key parameters include a gate charge (Qg) of 360 nC at 10V and input capacitance (Ciss) of 9100 pF at 25V. The IXFE180N10 utilizes a SOT-227B (miniBLOC) package for chassis mounting, facilitating efficient thermal management. This component is suitable for power conversion, motor control, and industrial power supplies. The operating temperature range is -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 176A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |
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