IXFD80N10Q-8XQ
MOSFET N-CHANNEL 100V DIEManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™ IXFD80N10Q-8XQ, a high-performance N-channel MOSFET die, offers a 100V drain-to-source voltage (Vdss). This component is fabricated using advanced MOSFET technology, delivering robust performance for demanding applications. Designed for high-efficiency power conversion, it finds utility in industries such as renewable energy, industrial power supplies, and automotive electronics. The die format of the IXFD80N10Q-8XQ allows for flexible integration into custom power module designs, enabling optimized thermal management and reduced parasitic inductance. This device is suitable for high-frequency switching applications where low on-state resistance and fast switching speeds are critical.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | - |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 100 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
