IXFC96N15P
MOSFET N-CH 150V 42A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS PolarHT™ HiPerFET™ IXFC96N15P is an N-Channel Power MOSFET offering 150V drain-source voltage and a continuous drain current of 42A at 25°C (Tc). This device features a low on-resistance of 26mOhm maximum at 48A and 10V gate drive. With a maximum power dissipation of 120W (Tc), it is designed for high-efficiency switching applications. Key parameters include a gate charge (Qg) of 110 nC maximum at 10V and input capacitance (Ciss) of 3500 pF maximum at 25V. The IXFC96N15P is housed in an ISOPLUS220™ package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 175°C. This component is well-suited for applications in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: PolarHT™ HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 48A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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