IXFC80N10
MOSFET N-CH 100V 80A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFC80N10 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 80A (Tc) at 25°C. With a low on-resistance of 12.5mOhm (Max) at 40A and 10V drive, it minimizes conduction losses. The MOSFET boasts a maximum power dissipation of 230W (Tc) and a junction temperature range of -55°C to 150°C. Key parameters include a Gate Charge (Qg) of 180 nC (Max) at 10V and input capacitance (Ciss) of 4800 pF (Max) at 25V. The IXFC80N10 utilizes the ISOPLUS220™ package for through-hole mounting, making it suitable for industrial automation, power supplies, and motor control systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
