IXFC74N20P
MOSFET N-CH 200V 35A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFC74N20P is an N-Channel PolarHT™ HiPerFET™ MOSFET designed for high-efficiency power switching applications. This component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C case temperature. With a low on-resistance (Rds On) of 36mOhm at 37A and 10V gate-source voltage, the IXFC74N20P minimizes conduction losses. The device boasts a maximum power dissipation of 120W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 107 nC at 10V and input capacitance (Ciss) of 3300 pF at 25V. Packaged in an ISOPLUS220™ through-hole format, this MOSFET is suitable for demanding applications in power supplies, motor control, and renewable energy systems.
Additional Information
Series: PolarHT™ HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
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