IXFC60N20
MOSFET N-CH 200V 60A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFC60N20 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 200V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C (Tc). The low on-resistance (Rds On) of 33mOhm at 30A and 10V gate drive voltage ensures minimal conduction losses. With a maximum power dissipation of 230W (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 155 nC at 10V and input capacitance (Ciss) of 5200 pF at 25V. The IXFC60N20 is housed in an ISOPLUS220™ package for through-hole mounting, offering robust thermal performance. It operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power supplies, motor control, and lighting systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 25 V |
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