IXFC36N50P
MOSFET N-CH 500V 19A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, PolarHT™ N-Channel Power MOSFET, part number IXFC36N50P, offers a 500V drain-source breakdown voltage with a continuous drain current of 19A at 25°C (Tc). This through-hole device features an Rds(on) of 190mOhm maximum at 18A and 10V gate drive. Key parameters include a gate charge of 93nC (max) at 10V and input capacitance of 5500pF (max) at 25V. With a maximum power dissipation of 156W (Tc) and an operating temperature range of -55°C to 150°C (TJ), the IXFC36N50P is suitable for high-efficiency power conversion applications in industries such as industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure. The ISOPLUS220™ package provides enhanced thermal performance.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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