IXFC30N60P
MOSFET N-CH 600V 15A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFC30N60P is a HiPerFET™, PolarHT™ series N-Channel Power MOSFET designed for high-efficiency applications. This component features a 600 V drain-source voltage (Vdss) and a continuous drain current (Id) of 15A (Tc) at 25°C. With a maximum power dissipation of 166W (Tc), it offers low on-resistance (Rds On) of 250mOhm at 15A and 10V Vgs. The device utilizes advanced MOSFET technology and is housed in an ISOPLUS220™ through-hole package. Key parameters include gate charge (Qg) of 85 nC @ 10 V and input capacitance (Ciss) of 3820 pF @ 25 V, with a maximum gate-source voltage (Vgs) of ±30V. It operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, motor control, and industrial applications.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 166W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3820 pF @ 25 V |
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