IXFC26N50P
MOSFET N-CH 500V 15A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, PolarHT™ IXFC26N50P is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C. The low on-resistance of 260mOhm at 13A and 10V gate drive ensures efficient power transfer, with a maximum power dissipation of 130W. Key parameters include a gate charge (Qg) of 65nC at 10V and an input capacitance (Ciss) of 3600pF at 25V. The device is housed in an ISOPLUS220™ package, suitable for through-hole mounting and operating across a temperature range of -55°C to 150°C. This MOSFET is utilized in industries such as power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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