IXFC24N50
MOSFET N-CH 500V 21A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFC24N50 is a 500V N-Channel Power MOSFET suitable for high-efficiency switching applications. This device features a continuous drain current of 21A at 25°C (Tc) and a maximum power dissipation of 230W (Tc). With a low on-resistance of 230mOhm at 12A and 10V, it minimizes conduction losses. The IXFC24N50 offers a gate charge (Qg) of 135 nC at 10V and input capacitance (Ciss) of 4200 pF at 25V. Designed for through-hole mounting in the ISOPLUS220™ package, it operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
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