IXFC22N60P
MOSFET N-CH 600V 12A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFC22N60P is a HiPerFET™, PolarHT™ series N-Channel Power MOSFET. It features a 600V breakdown voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). With a maximum Rds(on) of 360mOhm at 11A and 10V Vgs, this device offers efficient switching. The IXFC22N60P has a maximum power dissipation of 130W (Tc) and is housed in an ISOPLUS220™ package for through-hole mounting. Key parameters include a gate charge (Qg) of 58nC at 10V and input capacitance (Ciss) of 4000pF at 25V. This component is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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