IXFC16N80P
MOSFET N-CH 800V 9A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFC16N80P is an N-Channel Power MOSFET from the HiPerFET™, PolarHT™ series, designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 9 A at 25°C (Tc). With a maximum power dissipation of 150 W (Tc), it offers robust performance in demanding environments. The device exhibits a typical Rds On of 650 mOhm at 8 A and 10 V, with a Gate Charge (Qg) of 71 nC at 10 V. The input capacitance (Ciss) is rated at a maximum of 4600 pF at 25 V. Packaged in an ISOPLUS220™ through-hole configuration, this MOSFET operates across a temperature range of -55°C to 150°C (TJ). Its high voltage capability and efficient switching characteristics make it suitable for use in power factor correction, switch mode power supplies, and industrial motor drive applications.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
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