IXFC16N50P
MOSFET N-CH 500V 10A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™, PolarHT™ N-Channel Power MOSFET, part number IXFC16N50P, offers a 500V drain-to-source breakdown voltage and a continuous drain current capability of 10A at 25°C (Tc). This device features a low on-resistance of 450mOhm maximum at 8A, 10V, and a gate charge of 43nC at 10V. The IXFC16N50P is designed for efficient power switching applications, with a maximum power dissipation of 125W at 25°C (Tc). Its ISOPLUS220™ package facilitates efficient heat management for through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in power supply, motor control, and industrial applications.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 25 V |
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