IXFC15N80Q
MOSFET N-CH 800V 13A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFC15N80Q is an N-Channel power MOSFET designed for high voltage applications. This device features a maximum drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 13 A at 25°C (Tc). With a maximum power dissipation of 230 W (Tc) and a low on-resistance (Rds On) of 650 mOhm at 500 mA and 10 V, it offers efficient switching performance. The IXFC15N80Q utilizes ISOPLUS220™ packaging for enhanced thermal management and is suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 90 nC at 10 V and input capacitance (Ciss) of 4300 pF at 25 V. This component is utilized in power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 25 V |
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