IXFC14N80P
MOSFET N-CH 800V 8A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFC14N80P is an N-Channel Power MOSFET from the HiPerFET™, PolarHT™ series. This device features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 8A at 25°C (Tc). With a maximum power dissipation of 130W (Tc), it is suitable for high-voltage applications. The Rds On is specified at a maximum of 770mOhm at 7A and 10V, with a gate charge (Qg) of 61nC at 10V. Input capacitance (Ciss) is 3900pF at 25V. The IXFC14N80P utilizes ISOPLUS220™ through-hole packaging and operates across a temperature range of -55°C to 150°C (TJ). This component is commonly employed in power supply, motor control, and lighting applications.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 770mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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