IXFC14N60P
MOSFET N-CH 600V 8A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFC14N60P is a HiPerFET™, PolarHT™ series N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 8A at 25°C (Tc). With a maximum power dissipation of 125W (Tc), it offers robust performance in a through-hole ISOPLUS220™ package. The Rds On is specified at a maximum of 630mOhm at 7A and 10V, with a typical gate charge (Qg) of 36nC at 10V. This device is suitable for power conversion, industrial motor control, and renewable energy systems. It operates over a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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