IXFC13N50
MOSFET N-CH 500V 12A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFC13N50 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 12A at 25°C (Tc). With a maximum power dissipation of 140W (Tc) and a low on-resistance of 400mOhm at 6.5A and 10V, it is suitable for demanding designs. The device is housed in an ISOPLUS220™ package, facilitating through-hole mounting. Key characteristics include a gate charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 2800 pF at 25V. The operating temperature range is -55°C to 150°C. This MOSFET finds application in power supplies, motor control, and industrial automation sectors.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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