IXFC12N80P
MOSFET N-CH 800V 7A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFC12N80P is an N-Channel Power MOSFET from the HiPerFET™, PolarHT™ series, designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 7A at 25°C (Tc). The device offers a maximum power dissipation of 120W (Tc) and a low on-resistance (Rds On) of 930mOhm at 6A and 10V. Key parameters include a gate charge (Qg) of 51 nC at 10V and input capacitance (Ciss) of 2800 pF at 25V. The IXFC12N80P utilizes ISOPLUS220™ packaging for through-hole mounting and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 930mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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