IXFC110N10P
MOSFET N-CH 100V 60A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFC110N10P is an N-Channel Power MOSFET from the HiPerFET™, PolarHT™ series. This through-hole component features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 60A (Tc) at 25°C. With a maximum on-resistance (Rds On) of 17mOhm at 55A and 10V, it offers low conduction losses. The device has a gate charge (Qg) of 110 nC at 10V and an input capacitance (Ciss) of 3550 pF at 25V. It is rated for 120W (Tc) power dissipation and operates within a temperature range of -55°C to 175°C. The ISOPLUS220™ package ensures efficient thermal management. This MOSFET is utilized in applications such as power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 25 V |
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