IXFB80N50Q2
MOSFET N-CH 500V 80A PLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFB80N50Q2 is an N-Channel HiPerFET™ Q2 Class power MOSFET designed for high-efficiency applications. This device features a continuous drain current of 80A (Tc) at 25°C and a drain-source voltage (Vdss) of 500V. With a maximum power dissipation of 960W (Tc), it is suitable for demanding power conversion tasks. The IXFB80N50Q2 offers a low on-resistance of 60mOhm at 500mA and 10V, contributing to reduced conduction losses. Key parameters include input capacitance (Ciss) of 15000 pF @ 25V and gate charge (Qg) of 250 nC @ 10V. The component utilizes Metal Oxide technology and is packaged in a through-hole PLUS264™ (TO-264-3, TO-264AA) form factor. This MOSFET is commonly employed in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | PLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 25 V |
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