IXFB72N55Q2
MOSFET N-CH 550V 72A PLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFB72N55Q2 is a HiPerFET™, Q2 Class N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current of 72A at 25°C and a drain-source voltage (Vdss) of 550V. With a maximum on-resistance (Rds On) of 72mOhm at 500mA and 10V, it offers low conduction losses. The device boasts a high power dissipation capability of 890W at 25°C. Key electrical parameters include an input capacitance (Ciss) of 10500 pF at 25V and a gate charge (Qg) of 258 nC at 10V, facilitating efficient switching transitions. The IXFB72N55Q2 is housed in a TO-264-3, TO-264AA (PLUS264™) package for through-hole mounting. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for applications in industrial power supplies, motor drives, and high-voltage power conversion systems.
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | PLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 258 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 25 V |
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