IXFB70N60Q2
MOSFET N-CH 600V 70A PLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFB70N60Q2 is a HiPerFET™, Q2 Class N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 600 V drain-source voltage rating and a continuous drain current capability of 70 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 88 mOhm at 35 A and 10 V Vgs, it offers low conduction losses. The device boasts a high power dissipation of 890 W (Tc) and a low gate charge (Qg) of 265 nC at 10 V. The input capacitance (Ciss) is a maximum of 12000 pF at 25 V. Packaged in a through-hole PLUS264™ (TO-264-3, TO-264AA) format, it is suitable for demanding industrial power supplies, motor control, and solar inverters. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | PLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 265 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 25 V |
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