IXFB40N110Q3
MOSFET N-CH 1100V 40A PLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFB40N110Q3 is an N-Channel MOSFET from the HiPerFET™, Q3 Class series. This power MOSFET offers a high drain-source voltage (Vdss) of 1100 V and a continuous drain current (Id) of 40 A at 25°C (Tc). With a maximum power dissipation of 1560 W (Tc) and a low on-resistance (Rds On) of 260 mOhm at 20 A, 10 V, this component is designed for high-efficiency switching applications. Key parameters include a gate charge (Qg) of 300 nC at 10 V and input capacitance (Ciss) of 14000 pF at 25 V. The IXFB40N110Q3 features a through-hole mounting type in a PLUS264™ package (TO-264-3, TO-264AA) and operates across a temperature range of -55°C to 150°C (TJ). This device is suitable for use in industrial power supplies, motor control, and high-voltage DC-DC converters.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1560W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA |
| Supplier Device Package | PLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1100 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14000 pF @ 25 V |
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