IXFB120N50P2
MOSFET N-CH 500V 120A PLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFB120N50P2 is an N-Channel enhancement mode MOSFET from the HiPerFET™ and PolarHV™ series. This component offers a Drain to Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 120 A at 25°C (Tc), with a maximum power dissipation of 1890 W (Tc). The device features a low on-resistance (Rds On) of 43 mOhm at 500 mA and 10 V. Key parameters include a gate charge (Qg) of 300 nC at 10 V and input capacitance (Ciss) of 19000 pF at 25 V. The IXFB120N50P2 utilizes Metal Oxide technology and is housed in a through-hole PLUS264™ package (TO-264-3, TO-264AA). This component is suitable for applications in high-voltage power conversion and switching power supplies. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30 V.
Additional Information
Series: HiPerFET™, PolarHV™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1890W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | PLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19000 pF @ 25 V |
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