IXFB100N50Q3
MOSFET N-CH 500V 100A PLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFB100N50Q3 is a high-performance N-Channel power MOSFET from the HiPerFET™, Q3 Class series. This through-hole component features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc). With a maximum power dissipation of 1560W (Tc), it is designed for demanding applications. Key electrical specifications include a low on-resistance (Rds On) of 49mOhm at 50A and 10V, and a gate charge (Qg) of 255 nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in the TO-264-3, TO-264AA PLUS264™ package. This MOSFET is suitable for use in power supply, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1560W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA |
| Supplier Device Package | PLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 255 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 25 V |
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