IXFA5N50P3
MOSFET N-CH 500V 5A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFA5N50P3 is an N-Channel Power MOSFET from the HiPerFET™, Polar3™ series, designed for high-voltage applications. This component offers a 500 V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C with a maximum power dissipation of 114W (Tc). It features a low on-resistance of 1.65 Ohm at 2.5A and 10V gate drive, with a typical gate charge of 6.9 nC at 10 V. The input capacitance (Ciss) is rated at 370 pF at 25 V. This device is housed in a TO-263AA surface-mount package (also known as D2PAK), suitable for applications requiring efficient power switching. The IXFA5N50P3 is utilized in industries such as power supplies, industrial motor control, and renewable energy systems. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.65Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-263AA (IXFA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
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