IXFA4N85X
MOSFET N-CH 850V 3.5A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFA4N85X is an N-Channel HiPerFET™, Ultra X series MOSFET designed for high voltage applications. This device features a drain-source voltage (Vdss) of 850V and a continuous drain current (Id) of 3.5A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2.5 Ohms at 2A and 10V Vgs, it offers efficient switching characteristics. The device boasts a low gate charge (Qg) of 7 nC at 10V and an input capacitance (Ciss) of 247 pF at 25V. It is packaged in a TO-263-3, D2PAK surface mount package, allowing for a maximum power dissipation of 150W at 25°C (Tc). Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for power supply, solar inverter, and motor drive applications.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-263 (IXFA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 850 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 247 pF @ 25 V |
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