IXFA4N60P3
MOSFET N-CH 600V 4A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFA4N60P3 is a HiPerFET™, Polar3™ N-Channel Power MOSFET designed for high-voltage switching applications. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C. With a maximum on-resistance (Rds On) of 2.2 Ohms at 2A and 10V gate-source voltage, it offers efficient power handling, dissipating up to 114W at 25°C. The device utilizes a TO-263AA (IXFA) surface mount package, facilitating integration into compact designs. Key electrical parameters include a gate charge (Qg) of 6.9 nC maximum at 10V and input capacitance (Ciss) of 365 pF maximum at 25V. It operates across a temperature range of -55°C to 150°C. This MOSFET is commonly employed in power supply units, motor drives, and lighting control systems.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263AA (IXFA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFQ34N50P3
MOSFET N-CH 500V 34A TO3P
IXFQ20N50P3
MOSFET N-CH 500V 20A TO3P
IXFP16N50P3
MOSFET N-CH 500V 16A TO220AB
