IXFA4N100Q-TRL
MOSFET N-CH 1000V 4A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFA4N100Q-TRL is an N-Channel HiPerFET™, Q Class MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 4A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3 Ohms at 2A and 10V, it offers efficient power handling with a maximum power dissipation of 150W (Tc). The device has a gate charge (Qg) of 39 nC at 10V and an input capacitance (Ciss) of 1050 pF at 25V. Packaged in a TO-263AA (IXFA) surface-mount configuration, it is supplied on tape and reel. Operating temperatures range from -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply units, industrial motor control, and lighting systems.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
| Supplier Device Package | TO-263AA (IXFA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
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