IXFA3N80
MOSFET N-CH 800V 3.6A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFA3N80 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 800 V and a continuous Drain Current (Id) of 3.6 A at 25°C. With a maximum power dissipation of 100 W at 25°C (Tc), it is suitable for demanding power conversion tasks. The Rds On (Max) is specified at 3.6 Ohms with an Id of 500 mA and a Vgs of 10 V. Key parameters include a Gate Charge (Qg) of 24 nC maximum at 10 V and an Input Capacitance (Ciss) of 685 pF maximum at 25 V. This device utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK surface mount package. It operates within a temperature range of -55°C to 150°C (TJ) and is supplied in Tube packaging. This MOSFET finds application in power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-263AA (IXFA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 685 pF @ 25 V |
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