IXFA36N20X3
MOSFET N-CH 200V 36A TO263AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFA36N20X3 from the HiPerFET™, Ultra X3 series is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 36A at 25°C (Tc). With a low on-resistance (Rds On) of 45mOhm at 18A and 10V Vgs, it minimizes conduction losses. The IXFA36N20X3 offers a gate charge of 21 nC at 10V Vgs and an input capacitance of 1425 pF at 25V Vds. Maximum power dissipation is rated at 176W (Tc). It is housed in a TO-263AA surface-mount package, suitable for automated assembly in demanding environments. This MOSFET is well-suited for use in power supplies, motor control, and industrial power conversion systems.
Additional Information
Series: HiPerFET™, Ultra X3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 500µA |
| Supplier Device Package | TO-263AA (IXFA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1425 pF @ 25 V |
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