IXFA34N65X2-TRL
MOSFET N-CH 650V 34A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFA34N65X2-TRL is a HiPerFET™, Ultra X2 series N-Channel Power MOSFET designed for high-efficiency applications. This component features a 650V drain-source voltage (Vdss) and a continuous drain current of 34A at 25°C (Tc), with a maximum power dissipation of 540W (Tc). The low on-resistance is 100mOhm maximum at 17A and 10V gate-source voltage. Fabricated using MOSFET technology, it offers a gate charge of 56 nC maximum at 10V and input capacitance of 3230 pF maximum at 25V. The IXFA34N65X2-TRL is provided in a TO-263 (D2PAK) surface mount package on tape and reel. This device is suitable for use in power supply, motor drive, and renewable energy systems.
Additional Information
Series: HiPerFET™, Ultra X2RoHS Status: unknownManufacturer Lead Time: 47 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3230 pF @ 25 V |
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