IXFA270N06T3
MOSFET N-CH 60V 270A TO263AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFA270N06T3 is a HiperFET™, TrenchT3™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 60V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 270A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 3.1mOhm maximum at 100A and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 480W (Tc), it is suitable for demanding power management tasks. The IXFA270N06T3 is packaged in a TO-263AA surface mount package, facilitating integration into compact designs. Key electrical parameters include a gate charge (Qg) of 200 nC maximum at 10V Vgs and an input capacitance (Ciss) of 12600 pF maximum at 25V Vds. This MOSFET is commonly employed in industrial power supplies, electric vehicle systems, and renewable energy inverters.
Additional Information
Series: HiperFET™, TrenchT3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 270A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12600 pF @ 25 V |
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