IXFA24N60X
MOSFET N-CH 600V 24A TO263AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Ultra X Series N-Channel Power MOSFET, part number IXFA24N60X, offers a 600V drain-source voltage rating and a continuous drain current of 24A at 25°C (Tc). This device features a low on-resistance of 175mOhm maximum at 12A and 10V Vgs, with a maximum power dissipation of 400W (Tc). The IXFA24N60X is housed in a TO-263AA surface-mount package. Key parameters include a gate charge of 47 nC at 10V and input capacitance of 1910 pF at 25V. This component is suitable for applications in power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 2.5mA |
| Supplier Device Package | TO-263AA (IXFA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1910 pF @ 25 V |
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