IXFA18N60X
MOSFET N-CH 600V 18A TO263AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFA18N60X is a HiPerFET™, Ultra X series N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 600 V breakdown voltage and a continuous drain current rating of 18 A at 25°C, with a maximum power dissipation of 320 W (Tc). The device exhibits a low on-resistance of 230 mOhm at 9 A and 10 V gate drive. Key parameters include a gate charge of 35 nC and input capacitance of 1440 pF at 25 V. The IXFA18N60X is housed in a TO-263AA surface-mount package, suitable for demanding power conversion circuits found in industrial power supplies, lighting, and renewable energy systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 320W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
| Supplier Device Package | TO-263AA (IXFA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 25 V |
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